issue 1 - february 2006 1 www.zetex.com ? zetex semiconductors plc 2006 ZXTN23015CFH 15v, sot23, npn medium power transistor summary v (br)cex > 60v, v (br)ceo > 15v i c(cont) = 6a r ce(sat) = 19m typical v ce(sat) < 30mv @ 1a p d = 1.25w complementary part number : zxtp23015cfh description advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. the compact size and rating s of this device make it ideally suited to applications where space is at a premium. features ? higher power dissipation sot23 package high peak current low saturation voltage 60v forward blocking voltage applications dc - dc converters mosfet and igbt gate driving motor drive relay, lamp, and solenoid drive ordering information device marking 327 device reel size (inches) tape width quantity per reel ZXTN23015CFHta 7 8mm 3000 c e pinout - top view b
ZXTN23015CFH issue 1 - february 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings notes: (a) for a device surface mounted on 15mm x 15mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) mounted on 25mm x 25mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (c) mounted on 50mm x 50mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (d) as (c) above measured at t<5secs. parameter symbol limit unit collector-base voltage v cbo 60 v collector-emitter voltage v (br)cex 60 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 7.0 v peak pulse current i cm 12 a continuous collector current (c) i c 6a base current i b 1.2 a power dissipation @ t a =25 o c (a) linear derating factor (a) p d 0.73 5.84 w mw/ o c power dissipation @ t a =25 o c (b) linear derating factor (b) p d 1.05 8.4 w mw/ o c power dissipation @ t a =25 o c (c) linear derating factor (c) p d 1.25 9.6 w mw/ o c power dissipation @ t a =25 o c (d) linear derating factor (d) p d 1.81 14.5 w mw/ o c operating and storage temperature t j :t stg -55 to +150 o c thermal resistance parameter symbol value unit junction to ambient (a) r ja 171 o c/w junction to ambient (b) r ja 119 o c/w junction to ambient (c) r ja 100 o c/w junction to ambient (d) r ja 69 o c/w
ZXTN23015CFH issue 1 - february 2006 3 www.zetex.com ? zetex semiconductors plc 2006 characteristics
ZXTN23015CFH issue 1 - february 2006 4 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage v (br)cbo 60 85 v i c =100 a collector-emitter breakdown voltage v (br)cex 60 85 v i c =100 a, r be < 1k or -1v < v be < 0.25v collector-emitter breakdown voltage v (br)ceo 15 23 v i c =10ma (*) notes: (*) measured under pulsed conditions. pulse width = 300 s. duty cycle 2%. emitter-base breakdown voltage v (br)ebo 7.0 8.3 v i e =100 a collector-emitter cut-off current i cex -100nav ce = 48v, r be < 1k or -1v < v be < 0.25v collector-base cut-off current i cbo <1 20 na v cb =48v emitter-base cut-off current i ebo <1 10 na v eb =6v static forward current transfer ratio h fe 160 300 i c =10ma, v ce =2v (*) 200 350 560 i c =500ma, v ce =2v (*) 190 330 i c =3a, v ce =2v (*) 150 280 i c =6a, v ce =2v (*) collector-emitter saturation voltage v ce(sat) 715mv i c =0.1a, i b =5ma (*) 22 30 mv i c =1a, i b =100ma (*) 70 90 mv i c =3a, i b =60ma (*) 130 180 mv i c =6a, i b =120ma (*) base-emitter saturation voltage v be(sat) 0.83 0.93 v i c =3a, i b =60ma (*) 0.89 0.98 v i c =6a, i b =120ma (*) base-emitter turn-on voltage v be(on) 0.81 0.91 v i c =6a, v ce =2v (*) transition frequency f t 235 mhz ic=500ma, v ce =2v, f=50mhz output capacitance c obo 56 pf v cb =10v, f=1mhz delay time t (d) 15 ns v cc =5v, i c =3a, i b1 =i b2 =150ma rise time t (r) 38.5 ns storage time t (stg) 213 ns fall time t (f) 19.7 ns
ZXTN23015CFH issue 1 - february 2006 5 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
ZXTN23015CFH issue 1 - february 2006 6 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - sot23 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. max. max. a 2.67 3.05 0.105 0.120 h 0.33 0.51 0.013 0.020 b 1.20 1.40 0.047 0.055 k 0.01 0.10 0.0004 0.004 c - 1.10 - 0.043 l 2.10 2.50 0.083 0.0985 d 0.37 0.53 0.015 0.021 m 0.45 0.64 0.018 0.025 f 0.085 0.15 0.0034 0.0059 n 0.95 nom 0.0375 nom g 1.90 nom 0.075 nom - - - - - l n h g a c f b m k d 3 leads
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